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A comparison between the electron transport and optical properties of pseudomorphic high electron mobility quantum well with conventional AlGaAs donor layer and with AlAs delta-Si doped donor layer is presented. The structure with AlAs donor layer exhibits a mobility rise combined with the electron concentration decrease. We address this effect to the suppression of electron scattering on remote donor impurities and the decreased doping efficiency of Si atoms embedded in pure AlAs.

Pseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:δ-Si donor layer