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The paper presents the method of obtaining thin films of TiPbO3 by two-source magnetron sputtering DC-M. The films were obtained in a reactive process of sputtering metallic targets of titanium (Ti) and lead (Pb). The research involved the impact of the time of sputtering of the respective targets on voltage-dependent resistance of the obtained films for different power conditions, pressures of process gases and the powers provided on the targets. The obtained nonlinearity coefficients and the current-voltage I(U) characteristics were within the following range.

Thin-film TiPbO3varistors obtained by two-source magnetron sputtering

Thin-film TiPbO₃varistors obtained by two-source magnetron sputtering