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Recent progress in active-edge technology of silicon sensors enables thedevelopment of large-area tiled silicon pixel detectors with small dead spacebetween modules by utilizing edgeless sensors. Such technology has been provenin successful productions of ATLAS and Medipix-based silicon pixel sensors by afew foundries. However, the drawbacks of edgeless sensors are poor radiationhardness for ionizing radiation and non-uniform charge collection by edgepixels. In this work, the radiation hardness of edgeless sensors with differentpolarities has been investigated using Synopsys TCAD with X-rayradiation-damage parameters implemented. Results show that if no conventionalguard ring is present, none of the current designs are able to achieve a highbreakdown voltage (typically < 30 V) after irradiation to a dose of ~10 MGy. Inaddition, a charge-collection model has been developed and was used tocalculate the charges collected by the edge pixels of edgeless sensors whenilluminated with X-rays. The model takes into account the electric fielddistribution inside the pixel sensor, the absorption of X-rays, drift anddiffusion of electrons and holes, charge sharing effect, and threshold settingsin ASICs. It is found that the non-uniform charge collection of edge pixels iscaused by the strong bending of electric field and the non-uniformity dependson bias voltage, sensor thickness and distance from active edge to the lastpixel ("edge space"). In particular, the last few pixels close to the activeedge of the sensor are not sensitive to low-energy X-rays (< 10 keV) especiallyfor sensors with thicker Si and smaller edge space. The results from the modelcalculation have been compared to measurements and good agreement was obtained.The model has been used to optimize the edge design.

Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science