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We present the design, construction, and performance of a facility for thecharacterization of Silicon Avalanche Photodiodes in the operating temperaturerange between -2 $^\circ$C and 25 $^\circ$C. The system can simultaneouslymeasure up to 24 photo-detectors, in a completely automatic way, within one dayof operations. The measured data for each sensor are: the internal gain as afunction of the bias voltage and temperature, the gain variation with respectto the bias voltage, and the dark current as a function of the gain. Thesystematic uncertainties have been evaluated during the commissioning of thesystem to be of the order of 1%. This paper describes in detail the facilitydesign and layout, and the procedure employed to characterize the sensors. Theresults obtained from the measurement of the 380 Avalanche Photodiodes of theCLAS12-Forward Tagger calorimeter detector are then reported, as the firstexample of the massive usage of the facility.

Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes