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We present the results of the characterization of silicon pixel modulesemploying n-in-p planar sensors with an active thickness of 150$\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin activeedge sensor devices, produced at VTT in Finland. These thin sensors aredesigned as candidates for the ATLAS pixel detector upgrade to be operated atthe HL-LHC, as they ensure radiation hardness at high fluences. They areinterconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, then-in-p technology only requires a single side processing and thereby it is acost-effective alternative to the n-in-n pixel technology presently employed inthe LHC experiments. High precision beam test measurements of the hitefficiency have been performed on these devices both at the CERN SpS and atDESY, Hamburg. We studied the behavior of these sensors at different biasvoltages and different beam incident angles up to the maximum one expected forthe new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtainedwith 150 $\mathrm{\mu}$m thin sensors, assembled with the new ATLAS FE-I4 chipand irradiated up to a fluence of4$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$, show that they areexcellent candidates for larger radii of the silicon pixel tracker in theupgrade of the ATLAS detector at HL-LHC. In addition, the active edgetechnology of the VTT devices maximizes the active area of the sensor andreduces the material budget to suit the requirements for the innermost layers.The edge pixel performance of VTT modules has been investigated at beam testexperiments and the analysis after irradiation up to a fluence of5$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ has been performedusing radioactive sources in the laboratory.

Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges