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Experiments at the European X-ray Free Electron Laser (XFEL) require siliconpixel sensors which can withstand X-ray doses up to 1 GGy. For theinvestigation of X-ray radiation damage up to these high doses, MOS capacitorsand gate-controlled diodes built on high resistivity n-doped silicon withcrystal orientations <100> and <111> produced by two vendors, CiS andHamamatsu, have been irradiated with 12 keV X-rays at the DESY DORIS IIIsynchrotron light source. Using capacitance/conductance-voltage,current-voltage and thermal dielectric relaxation current measurements, thesurface densities of oxide charges and interface traps at the Si-SiO2interface, and the surface-current densities have been determined as functionof dose. Results indicate that the dose dependence of the surface density ofoxide charges and the surface-current density depend on the crystal orientationand producer. In addition, the influence of the voltage applied to the gates ofthe MOS capacitor and the gate-controlled diode during X-ray irradiation on thesurface density of oxide charges and the surface-current density has beeninvestigated at doses of 100 kGy and 100 MGy. It is found that both stronglydepend on the gate voltage if the electric field in the oxide points from thesurface of the SiO2 to the Si-SiO2 interface. Finally, annealing studies havebeen performed at 60 and 80 degree C on MOS capacitors and gate-controlleddiodes irradiated to 5 MGy and the annealing kinetics of oxide charges andsurface current determined.

Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL