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The performance of a silicon photomultiplier has been assessed at lowtemperature in order to evaluate its suitability as a scintillation readoutdevice in liquid argon particle physics detectors. The gain, measured as 2.1E6for a constant over-voltage of 4V was measured between 25degC and -196degC andfound to be invariant with temperature, the corresponding single photoelectrondark count rate reducing from 1MHz to 40Hz respectively. Following multiplethermal cycles no deterioration in the device performance was observed. Thephoton detection efficiency (PDE) was assessed as a function of photonwavelength and temperature. For an over-voltage of 4V, the PDE, found again tobe invariant with temperature, was measured as 25% for 460nm photons and 11%for 680nm photons. Device saturation due to high photon flux rate, observedboth at room temperature and -196degC, was again found to be independent oftemperature. Although the output signal remained proportional to the inputsignal so long as the saturation limit was not exceeded, the photoelectronpulse resolution and decay time increased slightly at -196degC.

Characterisation of a silicon photomultiplier device for applications in liquid argon based neutrino physics and dark matter searches