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Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extrap-layer below the collection electrode which provides signal amplification.When the primary electrons reach the amplification region new electron-holepairs are created that enhance the generated signal. The moderate gain of thesesensors, together with the relatively thin active region, provide precise timeinformation for minimum ionizing particles. To mitigate the effect of pile-upat the HL-LHC the ATLAS and CMS experiments have chosen the LGAD technology forthe High Granularity Timing Detector (HGTD) and for the End-Cap Timing Layer(ETL), respectively. A full characterization of recent productions of LGADsensors fabricated at CNM has been carried out before and after neutronirradiation up to 2.5 $\times$ 10$^{15}$ n$_{eq}$/cm$^{2}$ . Boron-dopedsensors produced in epitaxial and Si-on-Si wafers have been studied. Theresults include their electrically characterization (IV and bias voltagestability) and performance studies (charge and time resolution) for single paddevices with a Sr-90 radioactive source set-up. The behaviour of the Inter-Padregion for irradiated 2 $\times$ 2 LGAD arrays, using the Transient CurrentTechnique (TCT), is shown. The results indicate that the Si-on-Si devices withhigher resistivity perform better than the epitaxial ones.

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers