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Designing integrated circuits in radiation environments such as the HighLuminosity LHC (HL-LHC) is challenging. Integrated circuits will be exposed toradiation-induced Single Event Effects (SEE). In deep sub-micron technologydevices, the impact of SEEs can be mitigated by triple modular redundancy. Thetriplication of the most sensitive data is used to recover most of the datacorruption induced by interacting particles. One type of SEE, called singleevent upset (SEU), is studied in this paper. The SEU cross-section and theperformance of the triplication are estimated using an ASIC prototype exposedto a beam of protons. The SEU cross-section is measured, and a systematicdifference between $1\rightarrow{0}$ and $0\rightarrow{1}$ bit flip rates isobserved. The efficiency of the mitigation method is investigated.

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC