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This paper presents the detailed simulation of a double-pixel structure forcharged particle detection based on the 3D-trench silicon sensor developed forthe TIMESPOT project and a comparison of the simulation results withmeasurements performed at $\pi-$M1 beam at PSI laboratory. The simulation isbased on the combined use of several software tools (TCAD, GEANT4, TCoDe andTFBoost) which allow to fully design and simulate the device physics responsein very short computational time, O(1-100 s) per simulated signal, byexploiting parallel computation using single or multi-thread processors. Thisallowed to produce large samples of simulated signals, perform detailed studiesof the sensor characteristics and make precise comparisons with experimentalresults.

Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements