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The ePix detector family provides multiple variants of hybrid pixel detectorsto support a wide range of applications at free electron laser facilities. Wepresent the results of a systematic study of the influence of radiation induceddamage on the performance and lifetime of an ePix100a detector module using adirect attenuated beam of the EuXFEL at 9 keV photon energy and an averagepower of 10 $\mu$W. An area of 20 x 20 pixels was irradiated with an averagephoton flux of approx. 7 x $10^{9}$ photons/s to a dose of approximately760$\pm$65 kGy at the location of the Si/SiO$_2$ interfaces in the sensor. Adose dependent increase in both offset and noise of the ePix100a detector havebeen observed originating from an increase of the sensor leakage current.Moreover, we observed an effect directly after irradiation resulting in thesaturation of individual pixels by their dark current. Changes in gain areevaluated one and half hours post irradiation and suggest damage to occur alsoon the ASIC level. Based on the obtained results, thresholds for beamparameters are deduced and the detector lifetime is estimated with respect tothe requirements to the data quality in order to satisfy the scientificstandards defined by the experiments. We conclude the detector can withstand abeam with an energy up to 1 $\mu$J at a photon energy of 9 keV impacting on anarea of 1 mm$^2$. The detector can be used without significant degradation ofits performance for several years if the incident photon beam intensities donot exceed the detector's dynamic range by at least three orders of magnitude.Our results provide valuable input for the operation of the ePix100a detectorat FEL facilities and for the design of future detector technology.

Radiation Hardness Study of the ePix100 Sensor and ASIC under Direct Illumination at the European XFEL