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We report on the characterization of the response of windowless siliconavalanche photo-diodes to electrons in the 90-900 eV energy range. Theelectrons were provided by a monoenergetic electron gun present in the LASEClaboratories of University of Roma Tre. We find that the avalanche photo-diodegenerates a current proportional to the current of electrons hitting its activesurface. The gain is found to depend on the electron energy $E_e$, and variesfrom $2.147 \pm 0.027$ (for $E_e = 90$ eV) to $385.8 \pm 3.3$ (for $E_e = 900$eV), when operating the diode at a bias of $V_{apd} = 350$ V.} This is thefirst time silicon avalanche photo-diodes are employed to measure electronswith $E_e < 1$ keV.

Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range