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The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectorsmanufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK)were tested before and after irradiation with 1 MeV neutrons. Their performancewere measured in charge collection studies using b-particles from a 90Sr sourceand in capacitance-voltage scans (C-V) to determine the bias to deplete thegain layer. Carbon infusion to the gain layer of the sensors was tested by FBKin the UFSD3 production. HPK instead produced LGADs with a very thin, highlydoped and deep multiplication layer. The sensors were exposed to a neutronfluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timingresolution were measured as a function of bias voltage at -30C, furthermore theprofile of the capacitance over voltage of the sensors was measured.

Effect of deep gain layer and Carbon infusion on LGAD radiation hardness