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We report on the experimental study made on a successive prototype ofHigh-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detectorapplication, developed with 180 nm feature size. These sensors are to qualifymainly the peripheral data processing blocks (e.g. Command Decoder, TriggerBuffer, etc.). It is a smaller version of 24 X 36 pixelated sensor incomparison to the earlier generation of ATLASPix1 fabricated in both ams AG,Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showedbreakdown voltage 50 V in nonirradiated condition as it was seen on itspredecessors ATLASpix1, TSI produced prototypes reported breakdown voltagegreater than 100 V. The chosen wafer of MCz 20 Ohm.cm P-type substrateresistivity can deplete a few tenths of um, where the process-driven surfacedamage can have a greater impact on device operating conditions before andafter irradiation. In an aim to understand device intrinsic performance at theirradiated case, a dedicated neutron irradiation campaign has been made at JSIfor different fluences. Characterizations have been performed at differenttemperatures after irradiation to analyze the leakage current and breakdownvoltage before and after irradiation. TSI prototypes showed a breakdown voltagedecrease 90 V due to impact ionization and enhanced effective dopingconcentration. Results demonstrated for the neutron-irradiated devices up tothe fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage highenough to allow for high efficiency. Accelerated Annealing steps also made onselective irradiated ATLASPix2 samples, equivalent to more than two years ofroom-temperature annealing (at 20 degC), and they showed the reassuringexpected breakdown voltage increase and damage constant rate alpha^* (geometrydependent) decrease, driven by the beneficial annealing.

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC