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Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistanceproperties and can be deposited on a lot of different substrates. A-Si:H basedparticle detectors have been built since mid 1980s as planar p-i-n or Schottkydiode structures; the thickness of these detectors ranged from 1 to 50 micron.However MIP detection using planar structures has always been problematic dueto the poor S/N ratio related to the high leakage current at high depletionvoltage and the low charge collection efficiency. The usage of 3D detectorarchitecture can be beneficial for the possibility to reduce inter-electrodedistance and increase the thickness of the detector for larger chargegeneration compared to planar structures. Such a detector can be used forfuture hadron colliders for its radiation resistance and also for X-rayimaging. Furthermore the possibility of a-Si:H deposition on flexible materials(like kapton) can be exploited to build flexible and thin beam flux measurementdetectors and x-ray dosimeters.

Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment