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CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highlygranular silicon pixel detectors suited for highly sensitive charged particletracking. Being manufactured with cost efficient standard CMOS processes, CPSmay integrate sensing elements together with analogue and digital dataprocessing circuits into one monolithic chip. This turns into $50~\rm \mu m$thin sensors, which provide an outstanding typical spatial resolution of few$~\rm \mu m$ and a detection efficiency for minimum ionizing particles above$99.9\%$. The radiation tolerance of CPS was initially constrained by thelimits of the CMOS processes used for their production but has been improved byorders of magnitudes during the last years.  This work reviews the related R&D on the radiation tolerance of traditionalCPS with partially depleted active medium as pioneered by the MIMOSA-seriesdeveloped by the IPHC Strasbourg. Procedures for assessing radiation damage inthose non-standard pixels are discussed and the major mechanisms of radiationdamage are introduced. Techniques for radiation hardening are shown. Moreover,recent results on next generation CPS featuring fully depleted sensors based onimproved CMOS processes are summarized.

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors