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In view of the tracking detector application to the ATLAS High Luminosity LHC(HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS(HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm)commercial CMOS technology. By fully integrating both analog and digitalreadout-circuitry on the same particle-detecting substrate, current challengesof hybrid sensor technologies, i.e., larger readout input-capacitance, lowerproduction-yield, and higher production and integration cost, can bedownscaled. The large electrode design using high-resistivity substratesactively helps to mitigate the charge-trapping effects, making these chipsradiation hard. The surface and bulk damage induced in high irradiationenvironment change the effective doping concentration of the device, whichmodulates high electric fields as the reverse-bias voltage increases. Thiseffect can cause high leakage current and premature electrical breakdown,driven by impact ionization. In order to assess the characteristics of heavilyirradiated samples, we have carried out dedicated campaigns on ATLASPix1 chipsthat included irradiations of neutrons and protons, made at differentfacilities. Here, we report on the electrical characterization of theirradiated samples at different ambient conditions, also in comparison to theirpre-irradiation properties. Results demonstrate that hadron irradiated devicescan be safely operated at a voltage high enough to allow for high efficiency,up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL)expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation