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We report on the characterization by a position resolved laser system ofsmall-pitch 3D diodes irradiated with neutrons up to an extremely high fluenceof 3.5x10**16 neq cm**-2. We show that very high values of signal efficiencyare obtained, in good agreement with the geometrical expectation based on thesmall values of the inter-electrode spacings, and also boosted by chargemultiplication effects at high voltage. These results confirm the very highradiation tolerance of small-pitch 3D sensors well beyond the maximum fluencesexpected at the High Luminosity LHC.

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5x10**16 neq cm**-2

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5x1016 neq cm-2