English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

This paper reports on the characterisation with Transient Current Techniquemeasurements of the charge collection and depletion depth of a radiation-hardhigh-voltage CMOS pixel sensor produced at ams AG. Several substrateresistivities were tested before and after proton irradiation with twodifferent sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeVCyclotron at Bern Inselspital.

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation