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The impact of neutral impurity scattering of electrons on the charge driftmobility in high purity n-type germanium crystals at 77 Kelvin is investigated.We calculated the contributions from ionized impurity scattering, latticescattering, and neutral impurity scattering to the total charge drift mobilityusing theoretical models. The experimental data such as charge carrierconcentration, mobility and resistivity are measured by Hall Effect system at77 Kelvin. The neutral impurity concentration is derived from the Matthiessen'srule using the measured Hall mobility and ionized impurity concentration. Theradial distribution of the neutral impurity concentration in the self-growncrystals is determined. Consequently, we demonstrated that neutral impurityscattering is a significant contribution to the charge drift mobility, whichhas a dependence on the concentration of neutral impurities in high purityn-type germanium crystal.

The impact of neutral impurity concentration on charge drift mobility in n-type germanium