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TESS CCDs are backside illuminated deep depletion devices fabricated on high resistivity p-type silicon substrate and thinned down to a thickness of 100 microns. In order to fully deplete the substrate and increase the near-IR efficiency, we apply a bias voltage to the back side of the device. A bias of -20V is sufficient to fully deplete this device, but overdepletion is desirable to minimize lateral diffusion which can blur images and in turn affect the photometric precision by increasing an area (and, hence, readout and background noise) associated with a given object of interest. For this reason much larger negative bias voltages have been applied. We can achieve sharper images with larger negative substrate voltage, but we also discovered an unexpected dramatic increase of the full well capacity beyond a certain threshold voltage. A large full well above 200,000eis accompanied by poor charge conservation once the device is in the bloomed well condition. Both phenomena can be explained by backside voltage reaching through the substrate volume in the channel stop region, eliminating the barrier for holes, and dragging the floating channel stops to a more negative potential.

Reach-through effect in deep depletion TESS CCDs