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In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC),planned to start around 2023-2025, the ATLAS experiment will undergo areplacement of the Inner Detector. A higher luminosity will imply higherirradiation levels and hence will demand more ra- diation hardness especiallyin the inner layers of the pixel system. The n-in-p silicon technology is apromising candidate to instrument this region, also thanks to itscost-effectiveness because it only requires a single sided processing incontrast to the n-in-n pixel technology presently employed in the LHCexperiments. In addition, thin sensors were found to ensure radiation hardnessat high fluences. An overview is given of recent results obtained with notirradiated and irradiated n-in-p planar pixel modules. The focus will be onn-in-p planar pixel sensors with an active thickness of 100 and 150 um recentlyproduced at ADVACAM. To maximize the active area of the sensors, slim andactive edges are implemented. The performance of these modules is investigatedat beam tests and the results on edge efficiency will be shown.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade