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A Depleted Monolithic Active Pixel Sensor (DMAPS) on thick film SOI technology is being extensively investigated as a possible candidate for the outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. Its radiation hardness to TID (Total Ionizing Dose) and the absence of back gate effect for a dose of up to 700 Mrad was proven. Its charge collection properties have been characterized with radioactive sources and with eTCT (edge Transient Current Technique) measurements for both, unirradiated and irradiated devices. This article presents the first test beam results on this DMAPS on thick film SOI technology. The charge collection properties, charge sharing between pixel cells, spatial resolution and tracking efficiency are presented as a function of the applied bias voltage and different selection criteria.

Test beam results of a depleted monolithic active pixel sensor using an HV-SOI process for the LH-LHC upgrade