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Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.

Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions

Transport of modulation-doped Al_0.2Ga_0.8Sb/GaSb heterojunctions