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The effect of various annealing treatments on the structure properties of crystalline silicon (c-Si) produced by the inverted aluminium induced crystallization of amorphous silicon (a-Si) films was studied. The surface morphology and grain size of c-Si films were observed by optical microscope and scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to study quantity of Si crystallization due to thermal annealing. Results showed that the c-Si with an average grain size of 54 nm in a (111) orientation was obtained by the thermal annealing at 350 o C for 1 h. Prolonged heat treatment improved Si crystallite quality and increased the average grain size.

journal of physics. conference series

Effect of annealing conditions on polycrystalline silicon produced by the inverted aluminium-induced crystallization of amorphous silicon films on glass substrates