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New memory structures using threshold shifting from charge stored in quantum dots (QDs) and quantum rings (QRs) of Germanium (Ge) are described. The QDs and QRs of Ge were prepared on a p-Si (100) matrix by means of pulsed laser deposition (PLD) using the droplet technique combined with rapid annealing. The perfect planar nanorings with welldefined sharp inner and outer edges were formed via an elastic self-transformation of droplet process, which is probably driven by the lateral strain of the Ge/Si layers under annealing treatment. A significant shift of threshold-voltage of 1.2V and 2.5 V were observed in Ge QDs and QRs memory devices, respectively, when an operating voltage of 8 V was implemented on the device. It is attributed to the effect of Coulomb blockade and better interface properties of the Ge nanostructures.

Process parameters influence on formation of oxides in coatings during pulsed laser deposition of titanium on inner surface of tubes