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We have developed the deposition technology of WSi thin films 4 to 9 nm thickwith high temperature values of superconducting transition (Tc~4 K). Based ondeposed films there were produced nanostructures with indicative planar sizes~100 nm, and the research revealed that even on nanoscale the films possess ofhigh critical temperature values of the superconducting transition (Tc~3.3-3.7K) which certifies high quality and homogeneity of the films created. The firstexperiments on creating superconducting single-photon detectors showed that thedetectors SDE (system detection efficiency) with increasing bias current (Ib)reaches a constant value of ~30% (for 1550 nm) defined by infrared radiationabsorption by the superconducting structure. To enhance radiation absorption bythe superconductor there were created detectors with cavity structures whichdemonstrated a practically constant value of quantum efficiency >65% for biascurrents Ib>=0.6Ic. The minimal dark counts level (DC) made 1 s^-1 limited withbackground noise. Hence WSi is the most promising material for creatingsingle-photon detectors with record SDE/DC ratio and noise equivalent power(NEP).

Superconducting detector of IR single-photons based on thin WSi films