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The CV measurements and tunneling spectroscopy are used to study theballistic transport of the spin-polarized holes by varying the value of theRashba spin-orbit interaction (SOI) in the p-type quantum well prepared on thesurface of the n-CdF2<Y> bulk crystal. The findings of the hole conductanceoscillations in the plane of the p-type quantum well that are due to thevariations of the Rashba SOI are shown to be evidence of the spin transistoreffect, with the amplitude of the oscillations close to e2/h.Comment: 5 pages, 6 figure

Spin-dependent transport in p+-CdBxF2-x- n-CdF2planar structures

Spin-dependent transport in p⁺-CdB_xF_2-x- n-CdF₂planar structures