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We have developed a high resolution STEM imaging method using accelerating beam voltages of 30 kV and less. In this study, we examined and determined the low accelerating voltage parameters necessary for obtaining lattice resolution in STEM images, using the cold field emission scanning electron microscope (CFE-SEM), Hitachi SU9000. We also investigated and optimized the objective lens conditions for optimum lattice fringe imaging. The STEM images and associated Fourier transform image obtained at 30 kV show the Si (222) lattice fringes and reflection spots, corresponding to the d-lattice spacing of 0.157 nm. The STEM images and associated Fourier transform image at 15 kV show the Si (111) lattice fringes and reflection spot, corresponding to the d-lattice spacing of 0.314 nm.

Application of Low Energy STEM with the In-lens Cold FE-SEM