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In this work, we present an off-axis holography study of GaN/AlNheterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. Wediscuss the sample preparation of nanowire samples for electron holography andcombine potential profiles obtained using holography with theoreticalcalculations of the projected potential in order to gain understanding of thepotential distribution in these nanostructures. The effects of surface statesare discussed

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography