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The carrier dynamics in bulk Silicon, a paradigmatic indirect gapsemiconductor, is studied by using the Baym-Kadanoff equations. Both theelectron--electron(e-e) and electron--phonon(e-p) self--energies are calculatedfully ab-initio by using a semi-static GW approximation in the e-e case and aFan self-energy in the e-p case. By using the generalized Baym-Kadanoff ansatzthe two-time evolution is replaced by the only dynamics on the macroscopic timeaxis. The enormous numerical difficulties connected with a real-time simulationof realistic systems is overcame by using a completed collision approximationthat further simplifies the memory effects connected to the time evolution. Thecarrier dynamics is shown to reduce in such a way to have stringent connectionsto the well-known equilibrium electron-electron and electron-phononself-energies. This link allows to use general arguments to motivate therelative balance between the e-e and e-p scattering channels on the basis ofthe carrier energies.

journal of physics. conference series

Competition between the electronic and phonon-mediated scattering  channels in the out-of-equilibrium carrier dynamics of semiconductors: an  ab-initio approach