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In this work we show how the indium concentration in high indium content InxGa1-xN quantum wells, as they are commonly used in blue and green light emitting diodes, can be deduced from high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. This method bases on introducing normalized intensities which can be compared with multislice simulations to determine the specimen thickness or the indium concentration. The evaluated concentrations are compared with atom probe tomography measurements. It is also demonstrated how the quality of focused ion beam prepared TEM- lamellas can be improved by an additional etching with low energy ions.

A (S)TEM and atom probe tomography study of InGaN