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Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.

Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As