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This journal vol. entitled: International Workshop on Positron Studies of Defects (PSD 08), 1–5 September 2008, Charles University, Faculty of Mathematics and Physics, Praha, Czech RepublicZinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials. © Published under licence by IOP Publishing Ltd.link_to_subscribed_fulltex

Activities towardsp-type doping of ZnO