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Graphane is a semiconductor with an energy gap, obtained from hydrogenationof the two-dimensional grapheme sheet. Together with the two-dimensionalgeometry, unique transport features of graphene, and possibility of dopinggraphane, p and n regions can be defined so that p-n junctions become feasiblewith small reverse currents. Our recent analysis has shown that an ideal I-Vcharacteristic for this type of junctions may be expected. Here, we predict thebehavior of bipolar juncrion transistors based on graphane. Profiles ofcarriers and intrinsic parameters of the graphane transistor are calculated anddiscussed.

Bipolar Transistor Based on Graphane