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Single and stacked layers of InP quantum dots in (AlxGa1−x)0.51In0.49P barriers were grown by metal-organic vapor-phase epitaxy for applications in semiconductor laser devices and optical gate structures. An in-plane laser structure with a single layer of InP QDs is presented, emitting at 1.942 eV and exhibiting low threshold current densities of 780 A/cm2 in electrically pulsed laser operation at 288 K for a 2000μm long device with uncoated facets. In order to realize an externally driven optical gate structure the stacking behavior of InP in (AlxGa1−x)0.51In0.49P barriers was investigated. To ensure the optical addressability of each quantum dot layer, a special double dot structure where the high energetic smaller sized quantum dot is situated above the low energetic larger sized dot, was produced. The coupling between these quantum dots can be adjusted by the thickness of the spacer layer. The structures are embedded in a ni-Schottky structure and the influence of an external electric field on the emission of the quantum dot ensemble is investigated.

InP quantum dots for applications in laser devices and future solid-state quantum gates