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Synthesis and application of semiconductor nanowires (NWs) require detailed understanding of their structures. Transmission electron microscopy (TEM) has proven to be the most used structural characterisation tool for these nanostructures. For the characterisation of more complex heterostructured NWs, in this study axial (i.e. with "insert") or radial (i.e. "core-shell") III-V NWs, we use dark field TEM and high angle annular dark field scanning TEM (HAADF-STEM) as imaging modes. For the GaAs/GaAsSb/GaAs axial heterostructured NWs, dark field TEM exploits the structural difference between wurtzite GaAs NW and zinc blende GaAsSb insert, resulting in an excellent contrast between the GaAs part and the GaAsSb insert of the NW. In addition, twins, stacking faults and polytypes of the GaAs phase can easily be identified. For the radial GaAs/AlGaAs core-shell NWs where both core and shell have the wurtzite structure, HAADF-STEM is found to be a very useful technique.

Dark field transmission electron microscopy techniques for structural characterization of nanowire heterostructures