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The effect of doping with Ti, Ta, SiC in complex with synthesis temperatureon the amount and distribution of structural inhomogeneities in MgB2 matrix ofhigh-pressuresynthesized-materials (2 GPa) which can influence pining: higherborides (MgB12) and oxygen-enriched Mg-B-O inclusions, was established and amechanism of doping effect on jc increase different from the generally acceptedwas proposed. Near theoretically dense SiC-doped material exhibited jc= 1A/sq. cm in 1T field and Hirr =8.5 T at 20 K. The highest jc in fields above 9,6, and 4 T at 10, 20, and 25 K, respectively, was demonstrated by materialssynthesized at 2 GPa, 600 oC from Mg and B without additions (at 20 K jc= 100A/sq. cm in 10 T field). Materials synthesized from Mg and B taken up to 1:20ratio were superconductive. The highest jc (60000 A/sq. cm at 20 K in zerofield, Hirr= 5 T) and the amount of SC phase (95.3 percents of shieldingfraction), Tc being 37 K were demonstrated by materials having near MgB12composition of the matrix. The materials with MgB12 matrix had a doubledmicrohardness of that with MgB2 matrix (25 GPa and 13.08 GPa, at a load of 4.9N, respectively).

Effect of higher borides and inhomogeneity of oxygen distribution on critical current density of undoped and doped magnesium diboride