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SiNx interlayers can act as anti-surfactants and drastically reduce the dislocation density in pure GaN layers. In our work we could observe a very efficient dislocation annihilation of the a-type threading dislocations (TD) at a fractional SiNx monolayer even in AlxGa1?xN layers with relatively high Al content of x=0.2, grown on c-plane sapphire by MOVPE. The investigations were focused on the effect of the SiNx interlayer on the dislocation density reduction of the a-type TDs. Weak-beam dark-field (WBDF) and high-resolution (HR) TEM analyses directly at the SiNx interface indicate that the most frequently occurring effect for the reduction of the a-type TDs is the conversion of an a-type TD into an a-type basal dislocation due to lateral overgrowth of SiNx by AlGaN. To confirm this effect, an appropriate dislocation model was developed for the a-type TD in AlGaN and its bending due to the SiNx nano-mask. Corresponding image calculations were performed and compared with the experiments.

Simulation supported analysis of the effect of SiNxinterlayers in AlGaN on the dislocation density reduction

Simulation supported analysis of the effect of SiN_xinterlayers in AlGaN on the dislocation density reduction