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ZnO is a promising candidate for ultraviolet (UV) detectors due to its wide bandgap, good transparency, non-toxicity, low cost, and simple preparation. However, the performance of ZnO is low because of its high recombination rate. One alternative solution is fabricating a heterostructure of ZnO with a transition metal dichalcogenide (TMD) compound. This study proposes the facile fabrication of ZnO nanorods decorated with MoSe 2  nanosheets. MoSe 2  nanosheets were synthesized using the liquid-phase exfoliation method and added to the surface of ZnO nanorods via spin coating. The photodetector performance was enhanced with the addition of MoSe 2  nanosheets because the MoSe 2  could trap the electrons of defect sites of ZnO; hence, it decreased the dark current and slightly increased the photocurrent. The responsivity increased from 1.03 to 1.25 A/W, the detectivity increased from 0.82 x 10 9  to 1.9 x 10 9  Jones, and the sensitivity increased from 1261% to 5701%.

The Effect of Deposition of MoSe2 Nanosheets on the Performance of a ZnO-based UV Detector

The Effect of Deposition of MoSe₂ Nanosheets on the Performance of a ZnO-based UV Detector