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By Monte Carlo simulations we investigate the spectrum of voltage fluctuations of Si layers of variable thickness W in the range 2 ÷ 100 nm and variable length L in the range 10÷1000 nm embedded in an external dielectric medium. Calculations are performed at T = 300 K for di!erent doping levels and in the presence of an external bias of increasing strength. For W ! 100 nm and carrier densities of 5 " 10 17 and 5 " 10 18 cm ! 3 the peaks agree with the value of the three dimensional (3D) plasma frequency. For W # 10 nm the results exhibit a plasma frequency that depends on L, thus implying that the oscillation mode is dispersive. The corresponding frequency covers a wide range of values 0.2 ÷ 10 THz and is in agreement with the values predicted by existing analytical models. At su"ciently high bias the 2D plasma peak is washed out and we observe the onset of a peak in the subTHz region which, by analogy with the results obtained in n-InGaAs layers, is associated with transit time instabilities induced by current saturation conditions.

Plasmonic noise in Si and InGaAs semiconductor nanolayers