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Spectral features of broadband bow-tie diodes fabricated of InGaAs layers and modulation doped GaAs/AlGaAs structures are discussed. It is shown that sensitivity of both GaAs/AlGaAs- and InGaAs-based sensors at room temperature weakly depends on frequency in the range 0.01-1.0 THz; the sensitivity is found to be 0.3 V/W and 10 V/W, respectively. The InGaAs bow tie diodes coupled with silicon lenses are demonstrated in terahertz imaging application, their feasibility for real-time THz imaging is considered as well

Terahertz GaAs/AlGaAs- and InGaAs-based bow-tie diodes: Spectral features and applications for imaging