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International audienceWe observed a photovoltaic non-resonant terahertz photoresponse in a InGaAs/GaAs heterostructure with a large area double-grating-gate at room temperature. Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields exited in the structure by incoming terahertz radiation allowed us to interpret this detection as coming from the depleted regions of the channel

Terahertz detection in a double-grating-gate heterotransistor