English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We report on the InGaAs/GaAsSb material system lattice-matched to InP for intersubband devices. Due to the much lower electron effective mass in the GaAsSb barrier material, this system is very promising for the realization of high performance intersubband devices, like quantum-cascade lasers and quantum well infrared photodetectors. Type I intersubband absorption in InGaAs/GaAsSb multi-quantum wells samples has been studied experimentally and the conduction band offset at the InGaAs/GaAsSb hetero-interface has been determined to be 360 meV. Additionally, we realized the first Al-free QCL based on the same material system, emitting at a wavelength of 11.3 μm.

A new aluminum-free material system for intersubband emitters and detectors