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SiO 2  addition effect on electrical behaviour against current impulse in the ZnO varistors was investigated. SiO 2  acts as a controller in ZnO grain growth, decreasing the grain size of ZnO from 8.87 to 5.86 μm, which in turn results in an increase in breakdown voltage  E 1mA from 192.77 to 252.57 V/mm. SiO 2  has a significant influence on the current energy withstand capability and impulse aging characteristics. The results indicated that the SiO 2  content was optimized at 1.5 mol%, exhibiting the best energy withstand capability of 332.03J/cm 3  and clamping ratio of 1.71.

Electrical Behavior against Current Impulse in ZnO Varistor Ceramics with SiO2 Addition

Electrical Behavior against Current Impulse in ZnO Varistor Ceramics with SiO₂ Addition