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A 16 nm double-gate FinFET (DG-FinFET) designed are optimized with a mathematical modelling using a response surface method-central composite design (RSM-CCD), with the relationship between parameters and output responses are investigated and examined. The threshold voltage (V TH ), drive current (I ON ), leakage current (I OFF ) and subthreshold swing (SS) ramifications towards the adjustment of six process parameter that integrates polysilicon doping dose, polysilicon doping tilt, Source/Drain doping dose, Source/Drain doping tilt, V TH  doping dose and V TH  doping tilt is studied using the RSM-CCD using half-factorial of 86 experimental runs, which totals to 52 runs, consisting of 8 centre points, 12 axial points, and 32 factorials. Ultimately, the V TH  after the result is optimized with RSM-CCD showcased an improvement at 0.1785 V, with I OFF  achieved at 958.71 pA/μm despite performing less favourably after optimized. That said, an improvement towards I ON /I OFF  ratio at 2.049×10 6  compared to 1.666×10 6  proves that both optimization techniques have met the predictions of International Technology Roadmap for Semiconductors (ITRS) 2013.

Optimization of process parameter variations for 16nm DG-FinFET using Response Surface Methodology-Central Composite Design