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We have conducted a highly precise doping controlled experiment on a thinfilm of the single layer cuprate Bi2Sr2-xLaxCuOy (x = 0.6), in order to observethe superconducting insulating transition (SIT). Sr2+/La3+ substitution (x =0.6) allowed us to start from a doping state in the vicinity of the SIT, whichwas further finely-tuned by varying the oxygen content in very small amountsthrough a vacuum anneal process. Measurements of the Hall effect at 300K and ofthe resistance vs. T, R(T), have been performed after each treatment.Approaching the SIT from the metallic side, and with decreasing T, R(T)exhibits a high T metallic behaviour down to a temperature Tmin, followed by anon metallic increase (dR/dT< 0) up to a maximum at Tp before thesuperconducting transition at Tc. This re-entrant behaviour in R(T), commonlyobserved in cuprates close to the SIT, is attributed to a phase segregationphenomenon in the presence of strong electronic correlations andinhomogeneities. We present our results extracted from R(T) and Hall effectstudies in the region close to the SIT and in the insulating region. A phasediagram shows the characteristic temperatures versus doping.

Observation of the superconducting-insulating transition in a BiSr(La)CuO thin film tuned by varying the oxygen content