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Photoluminescence (PL) spectroscopy has been employed for analyzing defect levels in near stoichiometric Cu2ZnSnS4 (CZTS) thin films deposited using chemical spray pyrolysis (CSP) technique. An emission at 0.797 eV could be recorded at 15 K from the near stoichiometric CZTS thin films. This emission was persistent up to room temperature and could be identified as “donor to acceptor pair (DAP)” transition and also bears close connection with concentration of copper. Using temperature as well as excitation power dependent PL measurements and X-ray photoelectron spectroscopy (XPS) depth profile analysis, the emission at 0.797 eV could be identified as arising from transition between donor level (due to O Sn  defect) and acceptor level (created by Cu zn  defect).

Origin of PL emission at 0.797 eV in near stoichiometric spray deposited CZTS thin films