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This study aims to investigate the optical properties of SnO 2  thin films doped with Indium synthesized using the sol-gel spin coating technique. The optical properties of thin films were measured using  Thermo Scientific GENESYS UV-Vis Spectrophotometer . The results of characterization of optical properties showed that the thin films of Indium doped SnO 2  experienced an increase in transmittance from 75 - 96.6% at wavelengths 300 - 350 nm and increased maximum absorbance at a wavelength of 300 nm from 3.19 - 4.32 with an increase in doping percentage. This shows that thin films absorbance the maximum wave at a wavelength of 300 nm. Increasing the percentage of doping causes the thin films of SnO 2  to experience a decrease in energy gap both in the direct energy gap of 3.64 - 3.57 eV and indirect energy gap i.e from 3.92 - 3.87 eV. The optical activation energy of the SnO 2  thin films decreased with increasing doping percentage from 2.91 - 2.35 eV. The results of this study indicate that SnO 2 : In thin films is high-quality because it has high transmittance and low energy gap.

The Effect of Indium Doped SnO2 Thin Films on Optical Properties Prepared by Sol-Gel Spin Coating Technique

The Effect of Indium Doped SnO₂ Thin Films on Optical Properties Prepared by Sol-Gel Spin Coating Technique