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In the present work, it is proposed to use as a memory cell with random access a new type of memristor - a multiferroic wave memristor based on structures type magnonic crystal-ferroelectric. Main feature of propagating excitations trough such structure is band gap formation: Bragg band gap that position in spectrum depends on the polarization of ferroelectric. Thus, information from ferroelectric is read as a result of signal transmission / attenuation at frequency of band gap. In present work theoretical model of spin waves propagating in structure magnonic crystal-ferroelectric is developed. Results of an experimental study of the propagation of spin-wave excitations in such structure are given.

Concept of using composite multiferroic structure magnonic crystal - ferroelectric slab as memory unit